Catalog
650V, 15A, 3-pin THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (3-pin package)
Beta
⌘K
650V, 15A, 3-pin THD, Silicon-carbide (SiC) SBD
650V, 15A, 3-pin THD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Mounting Type | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Package / Case | Voltage - Forward (Vf) (Max) @ If | Speed | Technology | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 550 pF | 300 µA | Surface Mount | 0 ns | 15 A | 175 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1.55 V | No Recovery Time | SiC (Silicon Carbide) Schottky | ||
 Rohm Semiconductor | 650 V | 240 µA | Through Hole | 0 ns | 12 A | 175 °C | TO-220-2 Full Pack | 1.55 V | No Recovery Time | SiC (Silicon Carbide) Schottky | TO-220FM | ||
 Rohm Semiconductor | 650 V | 550 pF | 300 µA | Through Hole | 0 ns | 15 A | TO-247-3 | 1.55 V | No Recovery Time | SiC (Silicon Carbide) Schottky | TO-247 | 175 °C |