Catalog
650V, 6A, SMD, Silicon-carbide (SiC) SBD for Automotive
Description
AI
Switching loss reduced, enabling high-speed switching. (Surface mount package)
Beta
⌘K
650V, 6A, SMD, Silicon-carbide (SiC) SBD for Automotive
650V, 6A, SMD, Silicon-carbide (SiC) SBD for Automotive
| Part | Grade | Speed | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If [Max] | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Technology | Supplier Device Package | Qualification | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | Automotive | 500 mA | 175 ░C | 1.55 V | 0 ns | 120 µA | 219 pF | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 6 A | SiC (Silicon Carbide) Schottky | TO-263AB | AEC-Q101 | |
 Rohm Semiconductor | 500 mA | 175 ░C | 1.55 V | 0 ns | 120 µA | 219 pF | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 6 A | SiC (Silicon Carbide) Schottky | TO-263AB | |||
 Rohm Semiconductor | 500 mA | 175 ░C | 0 ns | 300 µA | 550 pF | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 15 A | SiC (Silicon Carbide) Schottky | TO-263AB | 1.55 V |