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TO-263
Discrete Semiconductor Products

FDB8441

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 80A, 2.5MΩ

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TO-263
Discrete Semiconductor Products

FDB8441

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 80A, 2.5MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB8441
Current - Continuous Drain (Id) @ 25°C120 A, 28 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]280 nC
Input Capacitance (Ciss) (Max) @ Vds15000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FDB8441 Series

N-Channel PowerTrench® MOSFET, 40V, 70A, 5.5mΩ