Discrete Semiconductor Products

FDB8444TS

Obsolete

MOSFET N-CH 40V 20A/70A TO263-5

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 20A/70A TO263-5

Technical Specifications

Parameters and characteristics for this part

Specification	FDB8444TS

Current - Continuous Drain (Id) @ 25°C	70 A, 20 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	338 nC
Input Capacitance (Ciss) (Max) @ Vds	8410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-6, TO-263BA, D2PAK (5 Leads + Tab)
Power Dissipation (Max)	181 W
Rds On (Max) @ Id, Vgs [Max]	5 mOhm
Supplier Device Package	TO-263-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel PowerTrench<sup>®</sup> MOSFET 40V, 80A, 2.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FDB8444TS	338 nC	Surface Mount	D2PAK (5 Leads + Tab) TO-263-6 TO-263BA	5 mOhm	MOSFET (Metal Oxide)	10 V	20 V	4 V	181 W	-55 °C	175 ░C	20 A 70 A	N-Channel	TO-263-5	40 V	8410 pF
ON Semiconductor FDB8443		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		MOSFET (Metal Oxide)	10 V	20 V	4 V	188 W	-55 °C	175 ░C	25 A 120 A	N-Channel	TO-263 (D2PAK)	40 V	9310 pF	185 nC	3 mOhm
ON Semiconductor FDB8444	128 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5.5 mOhm	MOSFET (Metal Oxide)	10 V	20 V	4 V	167 W	-55 °C	175 ░C	70 A	N-Channel	TO-263 (D2PAK)	40 V				8035 pF
ON Semiconductor FDB8441		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		MOSFET (Metal Oxide)	10 V	20 V	4 V		-55 °C	175 ░C	28 A 120 A	N-Channel	TO-263 (D2PAK)	40 V	15000 pF	280 nC	2.5 mOhm		300 W
ON Semiconductor FDB8444	128 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5.5 mOhm	MOSFET (Metal Oxide)	10 V	20 V	4 V	167 W	-55 °C	175 ░C	70 A	N-Channel	TO-263 (D2PAK)	40 V				8035 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel PowerTrench® MOSFET, 40V, 70A, 5.5mΩ

Technical documentation and resources

No documents available