FDB8441 Series

N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FDB8444TS	338 nC	Surface Mount	D2PAK (5 Leads + Tab) TO-263-6 TO-263BA	5 mOhm	MOSFET (Metal Oxide)	10 V	20 V	4 V	181 W	-55 °C	175 ░C	20 A 70 A	N-Channel	TO-263-5	40 V	8410 pF
ON Semiconductor FDB8443		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		MOSFET (Metal Oxide)	10 V	20 V	4 V	188 W	-55 °C	175 ░C	25 A 120 A	N-Channel	TO-263 (D2PAK)	40 V	9310 pF	185 nC	3 mOhm
ON Semiconductor FDB8444	128 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5.5 mOhm	MOSFET (Metal Oxide)	10 V	20 V	4 V	167 W	-55 °C	175 ░C	70 A	N-Channel	TO-263 (D2PAK)	40 V				8035 pF
ON Semiconductor FDB8441		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		MOSFET (Metal Oxide)	10 V	20 V	4 V		-55 °C	175 ░C	28 A 120 A	N-Channel	TO-263 (D2PAK)	40 V	15000 pF	280 nC	2.5 mOhm		300 W
ON Semiconductor FDB8444	128 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5.5 mOhm	MOSFET (Metal Oxide)	10 V	20 V	4 V	167 W	-55 °C	175 ░C	70 A	N-Channel	TO-263 (D2PAK)	40 V				8035 pF

N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

• Typ rDS(on)= 1.9mΩ at VGS= 10V, ID= 80A

• Typ Qg(10)= 215nC at VGS= 10V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

N-Channel PowerTrench® MOSFET, 40V, 70A, 5.5mΩ