Discrete Semiconductor Products

STGP7NB60KD

Obsolete

IGBT 600V 14A 80W TO220

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Discrete Semiconductor Products

Obsolete

IGBT 600V 14A 80W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STGP7NB60KD

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	56 A
Gate Charge	32.7 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Reverse Recovery Time (trr)	50 ns
Supplier Device Package	TO-220
Switching Energy	140 µJ
Td (on/off) @ 25°C [custom]	50 ns
Td (on/off) @ 25°C [custom]	15 ns
Test Condition	7 A, 15 V, 10 Ohm, 480 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Test Condition	Gate Charge	Reverse Recovery Time (trr)	Operating Temperature
STMicroelectronics STGP7NC60H	150 °C	-55 °C	TO-220	72 ns	18.5 ns	95 µJ 115 µJ	80 W	Through Hole	2.5 V	TO-220-3	600 V	25 A	50 A	7 A 10 Ohm 15 V 390 V	35 nC
STMicroelectronics STGP7NC60HD	150 °C	-55 °C	TO-220	72 ns	18.5 ns	95 µJ 115 µJ	80 W	Through Hole	2.5 V	TO-220-3	600 V	25 A	50 A	7 A 10 Ohm 15 V 390 V	35 nC	37 ns
STMicroelectronics STGP7NB60KD			TO-220	50 ns	15 ns	140 µJ	80 W	Through Hole	2.8 V	TO-220-3	600 V	14 A	56 A	7 A 10 Ohm 15 V 480 V	32.7 nC	50 ns	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.61

General part information

IGBT 600 V 14 A 80 W Through Hole TO-220

Technical documentation and resources