Discrete Semiconductor Products

STGP7NC60H

Obsolete

IGBT 600V 25A 80W TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 600V 25A 80W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STGP7NC60H

Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Pulsed (Icm)	50 A
Gate Charge	35 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220
Switching Energy	95 µJ, 115 µJ
Td (on/off) @ 25°C [custom]	72 ns
Td (on/off) @ 25°C [custom]	18.5 ns
Test Condition	7 A, 10 Ohm, 15 V, 390 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Test Condition	Gate Charge	Reverse Recovery Time (trr)	Operating Temperature
STMicroelectronics STGP7NC60H	150 °C	-55 °C	TO-220	72 ns	18.5 ns	95 µJ 115 µJ	80 W	Through Hole	2.5 V	TO-220-3	600 V	25 A	50 A	7 A 10 Ohm 15 V 390 V	35 nC
STMicroelectronics STGP7NC60HD	150 °C	-55 °C	TO-220	72 ns	18.5 ns	95 µJ 115 µJ	80 W	Through Hole	2.5 V	TO-220-3	600 V	25 A	50 A	7 A 10 Ohm 15 V 390 V	35 nC	37 ns
STMicroelectronics STGP7NB60KD			TO-220	50 ns	15 ns	140 µJ	80 W	Through Hole	2.8 V	TO-220-3	600 V	14 A	56 A	7 A 10 Ohm 15 V 480 V	32.7 nC	50 ns	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.88

General part information

IGBT 600 V 25 A 80 W Through Hole TO-220

Technical documentation and resources