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Silicon Carbide Schottky Diode, Single, 650 V, 30 A, 73 nC, TO-247, 2 Pins
Discrete Semiconductor Products

STPSC15H12WL

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STMicroelectronics

1200 V, 15 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

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Search across all available documentation for this part.

DocumentsDatasheetDiodes & Rectifiers Selection Guide+10
Silicon Carbide Schottky Diode, Single, 650 V, 30 A, 73 nC, TO-247, 2 Pins
Discrete Semiconductor Products

STPSC15H12WL

Active
STMicroelectronics

1200 V, 15 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Deep-Dive with AI

DocumentsDatasheetDiodes & Rectifiers Selection Guide+10

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC15H12WL
Capacitance @ Vr, F1200 pF
Current - Average Rectified (Io)15 A
Current - Reverse Leakage @ Vr90 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseDO-247-2 (Straight Leads)
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageDO-247
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 837$ 7.09
Tube 1$ 4.90
30$ 3.91
120$ 3.63

Description

General part information

STPSC15H12 Series

The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.