2N2605UB
ActiveSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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2N2605UB
ActiveSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2605UB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 mA |
| Current - Collector Cutoff (Max) [Max] | 10 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, No Lead |
| Power - Max [Max] | 400 mW |
| Supplier Device Package | UB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 75.66 | |
| Microchip Direct | N/A | 1 | $ 81.49 | |
| Newark | Each | 100 | $ 75.67 | |
| 500 | $ 72.76 | |||
Description
General part information
JAN2N2605-Transistor Series
This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/354. RHA level designators "M", "D", "P", "L", "R", "F’, "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-46 in accordance with figure 1, UB suffix in accordance with figure 2 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/354.
Documents
Technical documentation and resources
