Discrete Semiconductor Products
FDP030N06
ActiveON Semiconductor
MOSFET, N-CH, 60V, 120A, 175DEG C, 231W ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Discrete Semiconductor Products
FDP030N06
ActiveON Semiconductor
MOSFET, N-CH, 60V, 120A, 175DEG C, 231W ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP030N06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 231 W |
| Rds On (Max) @ Id, Vgs [Max] | 3.2 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.51 | |
| 10 | $ 3.68 | |||
| 100 | $ 2.64 | |||
| 500 | $ 2.20 | |||
| 1000 | $ 2.15 | |||
| Newark | Each | 1 | $ 5.13 | |
| 10 | $ 5.12 | |||
| 25 | $ 3.91 | |||
| 50 | $ 3.83 | |||
| 100 | $ 3.75 | |||
| 250 | $ 3.74 | |||
| 500 | $ 3.52 | |||
| ON Semiconductor | N/A | 1 | $ 1.98 | |
Description
General part information
FDP030N06B_F102 Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Documents
Technical documentation and resources