FDP030N06B_F102 Series

N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
ON Semiconductor FDP030N06	-55 °C	175 ░C	231 W	20 V	N-Channel	MOSFET (Metal Oxide)	151 nC	TO-220-3	10 V	4.5 V	Through Hole	3.2 mOhm	60 V	120 A	TO-220-3
ON Semiconductor FDP030N06B-F102	-55 °C	175 ░C		20 V	N-Channel	MOSFET (Metal Oxide)	99 nC	TO-220-3	10 V	4 V	Through Hole		60 V	120 A	TO-220-3	8030 pF	3.1 mOhm	205 W

Catalog

N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ

Key Features

• RDS(on)= 2.67mΩ ( Typ.) @ VGS= 10V, ID= 100A

• Low FOM RDS(on)*QG

• Low Reverse Recovery Charge, Qrr= 78 nC

• Soft Reverse Recovery Body Diode

• Enables High Efficiency in Synchronous Rectification

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.