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TO-220-3
Discrete Semiconductor Products

FDP030N06B-F102

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 195A, 3.1MΩ

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TO-220-3
Discrete Semiconductor Products

FDP030N06B-F102

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 195A, 3.1MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP030N06B-F102
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs99 nC
Input Capacitance (Ciss) (Max) @ Vds8030 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)205 W
Rds On (Max) @ Id, Vgs3.1 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.75
10$ 1.79
100$ 1.24
500$ 1.01
1000$ 1.01
NewarkEach 500$ 1.49
1000$ 1.34
2500$ 1.08
5000$ 1.05
ON SemiconductorN/A 1$ 0.93

Description

General part information

FDP030N06B_F102 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.