APTGTQ100DA65T1G

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650V/BOOST CHOPPER/IGBT MODULES

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Discrete Semiconductor Products

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650V/BOOST CHOPPER/IGBT MODULES

Technical Specifications

Parameters and characteristics for this part

Specification	APTGTQ100DA65T1G

Configuration	Boost Chopper
Current - Collector (Ic) (Max) [Max]	100 A
Input	Standard
Input Capacitance (Cies) @ Vce	6 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	250 W
Supplier Device Package	SP1
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

650V/Dual boost chopper/IGBT modules

Part	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Input	Configuration	Supplier Device Package	Mounting Type	Input Capacitance (Cies) @ Vce	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
Microchip Technology APTGTQ100DA65T1G	100 A	2.2 V	650 V	Module	Standard	Boost Chopper	SP1	Chassis Mount	6 nF	-40 C	175 °C	250 W
Microchip Technology APTGTQ100DDA65T3G	100 A	2.2 V	650 V	Module	Standard	Dual Boost Chopper	SP3F	Chassis Mount	6 nF	-40 C	175 °C	250 W
Microchip Technology APTGTQ100A65T1G	100 A	2.2 V	650 V	Module	Standard	Half Bridge	SP1	Chassis Mount	6 nF	-40 C	175 °C	250 W
Microchip Technology APTGTQ100H65T3G	100 A	2.2 V	650 V	Module	Standard	Full Bridge	SP3F	Chassis Mount	6 nF	-40 C	175 °C	250 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* High speed IGBT 5

* Low voltage drop

* Low tail current

Technical documentation and resources