APTGTQ100DDA65T3G-Module Series

650V/Dual boost chopper/IGBT modules

Catalog

650V/Dual boost chopper/IGBT modules

Part	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Input	Configuration	Supplier Device Package	Mounting Type	Input Capacitance (Cies) @ Vce	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
Microchip Technology APTGTQ100DA65T1G	100 A	2.2 V	650 V	Module	Standard	Boost Chopper	SP1	Chassis Mount	6 nF	-40 C	175 °C	250 W
Microchip Technology APTGTQ100DDA65T3G	100 A	2.2 V	650 V	Module	Standard	Dual Boost Chopper	SP3F	Chassis Mount	6 nF	-40 C	175 °C	250 W
Microchip Technology APTGTQ100A65T1G	100 A	2.2 V	650 V	Module	Standard	Half Bridge	SP1	Chassis Mount	6 nF	-40 C	175 °C	250 W
Microchip Technology APTGTQ100H65T3G	100 A	2.2 V	650 V	Module	Standard	Full Bridge	SP3F	Chassis Mount	6 nF	-40 C	175 °C	250 W

Catalog

650V/Dual boost chopper/IGBT modules

Key Features

• + Configuration: Dual boost chopper

• + VCES (V): 650

• + VCESat (V): 1.65

• + Current (A) Tc=80C: 60

• + Silicon type: TRENCH 5 IGBT

• + Package: SP3F

Description

* High speed IGBT 5 * Low voltage drop * Low tail current * Switching frequency up to 100 kHz * Low leakage current * Kelvin emitter for easy drive * Low stray inductance * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant