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SC-100 SOT-669
Discrete Semiconductor Products

PSMN9R0-30YL,115

Obsolete
NXP USA Inc.

MOSFET N-CH 30V 61A LFPAK56

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SC-100 SOT-669
Discrete Semiconductor Products

PSMN9R0-30YL,115

Obsolete
NXP USA Inc.

MOSFET N-CH 30V 61A LFPAK56

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN9R0-30YL,115
Current - Continuous Drain (Id) (Tc)61 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)17.8 nC
Input Capacitance (Ciss) (Max)1006 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)46 W
Rds On (Max)8 mOhm, 8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

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Description

General part information

PSMN9 Series

N-Channel 30 V 61A (Tc) 46W (Tc) Surface Mount LFPAK56, Power-SO8

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