Discrete Semiconductor Products

PSMN9R0-30LL,115

Obsolete

MOSFET N-CH 30V 21A 8DFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 21A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN9R0-30LL,115

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1193 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	8-DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)
Freescale Semiconductor - NXP PSMN9R0-30LL,115	20.6 nC	50 W	MOSFET (Metal Oxide)	2.15 V	Surface Mount	9 mOhm	1193 pF	4.5 V 10 V	8-DFN3333	21 A	8-VDFN Exposed Pad	30 V	-55 °C	150 °C	N-Channel	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 21A (Tc) 50W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)

Technical documentation and resources