PSMN9 Series
Manufacturer: NXP USA Inc.
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⌘K
MOSFET N-CH 25V 46A LFPAK56
| Part | Mounting Type | Power Dissipation (Max) | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Input Capacitance (Ciss) (Max) | Technology | Rds On (Max) | Package / Case | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | Surface Mount | 34 W | N-Channel | 20 V | 25 V | -55 °C | 175 °C | LFPAK56 Power-SO8 | 694 pF | MOSFET (Metal Oxide) | 9.1 mOhm | SC-100 SOT-669 | 1.95 V | 10 V | 4.5 V | 46 A | 12 nC | ||
 NXP USA Inc. | Surface Mount | 50 W | N-Channel | 20 V | 30 V | -55 °C | 150 °C | 8-DFN3333 | 1193 pF | MOSFET (Metal Oxide) | 9 mOhm | 8-VDFN Exposed Pad | 2.15 V | 10 V | 4.5 V | 21 A | 20.6 nC | 3.3 mm | 3.3 mm |
NXP USA Inc. | Surface Mount | 46 W | N-Channel | 20 V | 30 V | -55 °C | 175 °C | LFPAK56 Power-SO8 | 1006 pF | MOSFET (Metal Oxide) | 8 mOhm 8 mOhm | SC-100 SOT-669 | 2.15 V | 10 V | 4.5 V | 61 A | 17.8 nC |