Discrete Semiconductor Products

2STBN15D100

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STMicroelectronics

TRANS DARLINGTON NPN 100V 12A 70000MW 3-PIN(2+TAB) D2PAK T/R

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Discrete Semiconductor Products

Active

STMicroelectronics

TRANS DARLINGTON NPN 100V 12A 70000MW 3-PIN(2+TAB) D2PAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2STBN15D100

Current - Collector (Ic) (Max) [Max]	12 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 hFE
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	70 W
Supplier Device Package	TO-263 (D2PAK)
Vce Saturation (Max) @ Ib, Ic [Max]	1.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Low voltage NPN power Darlington transistor

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics 2STBN15D100T4	100 µA	1.3 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	70 W	750 hFE	12 A	TO-263 (D2PAK)	150 °C	100 V
STMicroelectronics 2STBN15D100	100 µA	1.3 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	70 W	750 hFE	12 A	TO-263 (D2PAK)	150 °C	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.

Technical documentation and resources