Catalog
Low voltage NPN power Darlington transistor
Description
AI
The device is manufactured in planar technology with "base island" layout and monolithic Darlington configuration.
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Low voltage NPN power Darlington transistor
Low voltage NPN power Darlington transistor
| Part | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 12 A | 750 | Surface Mount | 100 µA | 70 W | TO-263 (D2PAK) | 1.3 V | 150 °C | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
STMicroelectronics | 12 A | 750 | Surface Mount | 100 µA | 70 W | TO-263 (D2PAK) | 1.3 V | 150 °C | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |