Discrete Semiconductor Products
SCTWA40N12G24AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 75 MOHM TYP., 33 A IN AN HIP247-4 PACKAGE
Discrete Semiconductor Products
SCTWA40N12G24AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 75 MOHM TYP., 33 A IN AN HIP247-4 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTWA40N12G24AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1230 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 290 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-247-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTWA40N12G24AG Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources