SCTWA40N12G24AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Qualification	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Grade	Power Dissipation (Max)
STMicroelectronics SCTWA40N12G24AG	63 nC	18 V	N-Channel	Through Hole	AEC-Q101	TO-247-4	200 °C	-55 ░C	22 V	-10 V	1.2 kV	1230 pF	5 V	TO-247-4	33 A	MOSFET (Metal Oxide)	Automotive	290 W

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.