
Discrete Semiconductor Products
MJD117RLG
ObsoleteON Semiconductor
2.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

Discrete Semiconductor Products
MJD117RLG
ObsoleteON Semiconductor
2.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD117RLG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 20 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Frequency - Transition | 25 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 1.75 W |
| Supplier Device Package | DPAK |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJD117 Series
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
Documents
Technical documentation and resources