Zenode.ai Logo
Beta
DPAK_369C
Discrete Semiconductor Products

MJD112T4

Obsolete
ON Semiconductor

2.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

DPAK_369C
Discrete Semiconductor Products

MJD112T4

Obsolete
ON Semiconductor

2.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD112T4
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
Frequency - Transition25 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]20 W
Supplier Device PackageDPAK
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.60
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.26
Digi-Reel® 1$ 0.60
1$ 0.91
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.26
Tape & Reel (TR) 2500$ 0.23
5000$ 0.22
12500$ 0.20
25000$ 0.20

Description

General part information

MJD112 Series

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.