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TO-252-3
Discrete Semiconductor Products

MJD112TF

Obsolete
ON Semiconductor

2.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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TO-252-3
Discrete Semiconductor Products

MJD112TF

Obsolete
ON Semiconductor

2.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD112TF
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
Frequency - Transition25 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageDPAK
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJD117 Series

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.