Specification	FDMC8010

Current - Continuous Drain (Id) @ 25°C	75 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	5860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.4 W, 54 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	Power33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

FDMC8010 Series

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

Part	Rds On (Max) @ Id, Vgs	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type
ON Semiconductor FDMC8030	10 mOhm	Logic Level Gate	Surface Mount	1975 pF	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	8-Power33 (3x3)	12 A	30 nC	2 N-Channel (Dual)	2.8 V	800 mW	40 V
ON Semiconductor FDMC8010	1.3 mOhm		Surface Mount	5860 pF	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	Power33	30 A 75 A					30 V	4.5 V 10 V	2.5 V	2.4 W 54 W	94 nC	20 V	N-Channel
ON Semiconductor FDMC8010A
ON Semiconductor FDMC8010A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.96
		10	$ 1.92
		100	$ 1.33
		500	$ 1.08
		1000	$ 0.99
	Digi-Reel®	1	$ 2.96
		10	$ 1.92
		100	$ 1.33
		500	$ 1.08
		1000	$ 0.99
	Tape & Reel (TR)	3000	$ 0.93
Newark	Each (Supplied on Full Reel)	3000	$ 1.18
		6000	$ 1.12
		12000	$ 1.01
		18000	$ 0.97
		30000	$ 0.93
ON Semiconductor	N/A	1	$ 0.65

Description

General part information

FDMC8010 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on)is required in small spaces such as High performance VRM, POL and Oring functions.

Documents

Technical documentation and resources

Package Drawing-483AW-WDFN8 3.30x3.30x0.75, 0.65P

Package Drawing

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet