Specification	FDMC8030

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

FDMC8010 Series

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

Part	Rds On (Max) @ Id, Vgs	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type
ON Semiconductor FDMC8030	10 mOhm	Logic Level Gate	Surface Mount	1975 pF	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	8-Power33 (3x3)	12 A	30 nC	2 N-Channel (Dual)	2.8 V	800 mW	40 V
ON Semiconductor FDMC8010	1.3 mOhm		Surface Mount	5860 pF	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	Power33	30 A 75 A					30 V	4.5 V 10 V	2.5 V	2.4 W 54 W	94 nC	20 V	N-Channel
ON Semiconductor FDMC8010A
ON Semiconductor FDMC8010A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.98
		10	$ 1.26
		100	$ 0.85
		500	$ 0.68
		1000	$ 0.62
	Digi-Reel®	1	$ 1.98
		10	$ 1.26
		100	$ 0.85
		500	$ 0.68
		1000	$ 0.62
	Tape & Reel (TR)	3000	$ 0.55
		6000	$ 0.51

Description

General part information

FDMC8010 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on)is required in small spaces such as High performance VRM, POL and Oring functions.