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SG6858TZ
Discrete Semiconductor Products

FDC645N

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 5.5 A, 0.026 OHM, SUPERSOT, SURFACE MOUNT

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SG6858TZ
Discrete Semiconductor Products

FDC645N

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 5.5 A, 0.026 OHM, SUPERSOT, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC645N
Current - Continuous Drain (Id) @ 25°C5.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC
Input Capacitance (Ciss) (Max) @ Vds1460 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs26 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.09
10$ 0.68
100$ 0.45
500$ 0.35
1000$ 0.31
Digi-Reel® 1$ 1.09
10$ 0.68
100$ 0.45
500$ 0.35
1000$ 0.31
Tape & Reel (TR) 3000$ 0.27
6000$ 0.25
9000$ 0.24
15000$ 0.23
NewarkEach (Supplied on Full Reel) 3000$ 0.31
6000$ 0.29
12000$ 0.27
18000$ 0.25
30000$ 0.24
ON SemiconductorN/A 1$ 0.21

Description

General part information

FDC645N Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.