Discrete Semiconductor Products

FDC645N_F095

Obsolete

ON Semiconductor

MOSFET N-CH 30V 5.5A SUPERSOT6

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

FDC645N_F095

Obsolete

ON Semiconductor

MOSFET N-CH 30V 5.5A SUPERSOT6

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDC645N_F095

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

FDC645N Series

N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 5.5A, 26mΩ

Part	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Technology	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDC645N_F095	30 V	Surface Mount	12 V	MOSFET (Metal Oxide)	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	1460 pF	5.5 A	N-Channel	21 nC	2 V	26 mOhm	-55 °C	150 °C
ON Semiconductor FDC645N	30 V	Surface Mount	12 V	MOSFET (Metal Oxide)	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	1460 pF	5.5 A	N-Channel	21 nC	2 V	26 mOhm	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC645N Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Documents

Technical documentation and resources

No documents available