FDC645N Series

N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ

Part	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Technology	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDC645N_F095	30 V	Surface Mount	12 V	MOSFET (Metal Oxide)	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	1460 pF	5.5 A	N-Channel	21 nC	2 V	26 mOhm	-55 °C	150 °C
ON Semiconductor FDC645N	30 V	Surface Mount	12 V	MOSFET (Metal Oxide)	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	1460 pF	5.5 A	N-Channel	21 nC	2 V	26 mOhm	-55 °C	150 °C

Catalog

N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ

Key Features

• 5.5 A, 30 V.

• RDS(on)= 30 mΩ @ VGS= 4.5 V

• RDS(on)= 26 mΩ @ VGS= 10 V

• High performance trench technology for extremelylow RDS(ON)

• Low gate charge (13 nC typical)

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.