
Discrete Semiconductor Products
FGA40T65SHDF
ObsoleteON Semiconductor
IGBT, 650 V, 40 A FIELD STOP TRENCH
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Discrete Semiconductor Products
FGA40T65SHDF
ObsoleteON Semiconductor
IGBT, 650 V, 40 A FIELD STOP TRENCH
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FGA40T65SHDF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 68 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 268 W |
| Reverse Recovery Time (trr) | 101 ns |
| Supplier Device Package | TO-3PN |
| Switching Energy | 1.22 mJ, 440 µJ |
| Td (on/off) @ 25°C | 64 ns, 18 ns |
| Test Condition | 40 A, 15 V, 400 V, 6 Ohm |
| Vce(on) (Max) @ Vge, Ic | 1.81 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.66 | |
| 10 | $ 3.08 | |||
Description
General part information
FGA40T65SHDF Series
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
Documents
Technical documentation and resources