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FGA40S65SH
Discrete Semiconductor Products

FGA40T65UQDF

Obsolete
ON Semiconductor

IGBT, 650 V, 40 A FIELD STOP TRENCH

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FGA40S65SH
Discrete Semiconductor Products

FGA40T65UQDF

Obsolete
ON Semiconductor

IGBT, 650 V, 40 A FIELD STOP TRENCH

Technical Specifications

Parameters and characteristics for this part

SpecificationFGA40T65UQDF
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)120 A
Gate Charge306 nC
IGBT TypeNPT
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Reverse Recovery Time (trr)89 ns
Supplier Device PackageTO-3PN
Switching Energy310 µJ, 989 µJ
Td (on/off) @ 25°C271 ns, 32 ns
Test Condition40 A, 15 V, 400 V, 6 Ohm
Vce(on) (Max) @ Vge, Ic1.67 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 146$ 2.06
146$ 2.06

Description

General part information

FGA40T65SHDF Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.