FGA40T65SHDF Series

IGBT, 650 V, 40 A Field Stop Trench

Catalog

IGBT, 650 V, 40 A Field Stop Trench

Part	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Test Condition	Vce(on) (Max) @ Vge, Ic	IGBT Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Power - Max [Max]	Td (on/off) @ 25°C
ON Semiconductor FGA40T65UQDF	650 V	310 µJ 989 µJ	6 Ohm 15 V 40 A 400 V	1.67 V	NPT	80 A	TO-3PN	89 ns	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	306 nC	32 ns 271 ns	120 A
ON Semiconductor FGA40T65SHDF	650 V	1.22 mJ 440 µJ	6 Ohm 15 V 40 A 400 V	1.81 V	Trench Field Stop	80 A	TO-3PN	101 ns	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	68 nC		120 A	268 W	18 ns 64 ns
ON Semiconductor FGA40T65UQDF	650 V	310 µJ 989 µJ	6 Ohm 15 V 40 A 400 V	1.67 V	NPT	80 A	TO-3PN	89 ns	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	306 nC	32 ns 271 ns	120 A

Catalog

IGBT, 650 V, 40 A Field Stop Trench

Key Features

• Maximum Junction Temperature : TJ= 175°C

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat)= 1.45 V ( Typ.) @ IC= 40 A

• 100% of the Parts tested for ILM(1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.