Discrete Semiconductor Products
STL9P4LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE P-CHANNEL ENHANCEMENT MODE POWER MOSFET STRIPFET F6 -40 V, -8 A IN A POWERFLAT 3.3X3.3 PACKAGE
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Discrete Semiconductor Products
STL9P4LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE P-CHANNEL ENHANCEMENT MODE POWER MOSFET STRIPFET F6 -40 V, -8 A IN A POWERFLAT 3.3X3.3 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STL9P4LF6AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 48 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2540 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 50 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 26 mOhm |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 18 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.45 | |
Description
General part information
STL9P4LF6AG Series
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources