STL9P4LF6AG Series

Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

Catalog

Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Grade	Qualification	Mounting Type
STMicroelectronics STL9P4LF6AG	2540 pF	50 W	18 V	8-PowerVDFN	150 °C	-55 °C	48 nC	4.5 V 10 V	31 A	26 mOhm	P-Channel	MOSFET (Metal Oxide)	2.5 V	PowerFlat™ (3.3x3.3)	40 V	Automotive	AEC-Q101	Surface Mount

Catalog

Automotive P-channel enhancement mode Power MOSFET STripFET F6 -40 V, -8 A in a PowerFLAT 3.3x3.3 package

Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.