Specification	QED123

Current - DC Forward (If) (Max) [Max]	100 mA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	T 1 3/4, Radial
Package / Case [diameter]	5 mm
Radiant Intensity (Ie) Min @ If	100 mA
Radiant Intensity (Ie) Min @ If [Min]	50 mW/sr
Type	Infrared (IR)
Viewing Angle	18 °
Voltage - Forward (Vf) (Typ)	1.7 V
Wavelength	880 nm

QED123 Series

AlGaAs Infrared Emitting Diode

Part	Orientation	Voltage - Forward (Vf) (Typ)	Mounting Type	Current - DC Forward (If) (Max) [Max]	Viewing Angle	Wavelength	Package / Case [diameter]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Type	Radiant Intensity (Ie) Min @ If [Min]	Radiant Intensity (Ie) Min @ If
ON Semiconductor QED122	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)
ON Semiconductor QED123	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)	50 mW/sr	100 mA
ON Semiconductor QED121	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)	16 mW/sr

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The QED12X is an 880 nm AlGaAs LED encapsulated in a clear, peach-tinted, plastic T-1 3/4 package.

Technical documentation and resources