QED123 Series

AlGaAs Infrared Emitting Diode

Catalog

AlGaAs Infrared Emitting Diode

Part	Orientation	Voltage - Forward (Vf) (Typ)	Mounting Type	Current - DC Forward (If) (Max) [Max]	Viewing Angle	Wavelength	Package / Case [diameter]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Type	Radiant Intensity (Ie) Min @ If [Min]	Radiant Intensity (Ie) Min @ If
ON Semiconductor QED122	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)
ON Semiconductor QED123	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)	50 mW/sr	100 mA
ON Semiconductor QED121	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)	16 mW/sr

AlGaAs Infrared Emitting Diode

• λ = 880 nm

• Chip material = AlGaAs

• Package type: T-1 3/4 (5mm lens diameter)

• Matched photosensor: QSD122/QSD123/QSD124

• Narrow emission angle, 16°

• High output power

• Package material and color: clear, peach tinted, plastic

The QED12X is an 880 nm AlGaAs LED encapsulated in a clear, peach-tinted, plastic T-1 3/4 package.