QED122

Obsolete

EMITTER IR 880NM 100MA RADIAL

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Optoelectronics

Obsolete

EMITTER IR 880NM 100MA RADIAL

Technical Specifications

Parameters and characteristics for this part

AlGaAs Infrared Emitting Diode

Part	Orientation	Voltage - Forward (Vf) (Typ)	Mounting Type	Current - DC Forward (If) (Max) [Max]	Viewing Angle	Wavelength	Package / Case [diameter]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Type	Radiant Intensity (Ie) Min @ If [Min]	Radiant Intensity (Ie) Min @ If
ON Semiconductor QED122	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)
ON Semiconductor QED123	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)	50 mW/sr	100 mA
ON Semiconductor QED121	Top View	1.7 V	Through Hole	100 mA	18 °	880 nm	5 mm	Radial T 1 3/4	-40 °C	100 °C	Infrared (IR)	16 mW/sr

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The QED12X is an 880 nm AlGaAs LED encapsulated in a clear, peach-tinted, plastic T-1 3/4 package.

Technical documentation and resources