Discrete Semiconductor Products

NTTFS008N04CTAG

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POWER MOSFET, SINGLE N-CHANNEL, 40 V, 8.5 MOHMS, 48 A

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Discrete Semiconductor Products

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POWER MOSFET, SINGLE N-CHANNEL, 40 V, 8.5 MOHMS, 48 A

Technical Specifications

Parameters and characteristics for this part

Specification	NTTFS008N04CTAG

Current - Continuous Drain (Id) @ 25°C	48 A, 14 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	38 W, 3.1 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Power MOSFET, Single N-Channel, 40 V, 8.5 mOhms, 48 A

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package
ON Semiconductor NTTFS008P03P8Z	30 V	22 A 96 A	5600 pF	-55 °C	150 °C	25 V	Surface Mount	8-PowerWDFN	4.5 V 10 V	134 nC	2.36 W 50 W	3.8 mOhm	P-Channel	MOSFET (Metal Oxide)	3 V	8-PQFN (3.3x3.3)
ON Semiconductor NTTFS008N04CTAG	40 V	14 A 48 A	625 pF	-55 °C	175 ░C	20 V	Surface Mount	8-PowerWDFN	10 V	10 nC	3.1 W 38 W	8.5 mOhm	N-Channel	MOSFET (Metal Oxide)	3.5 V	8-WDFN (3.3x3.3)

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General part information

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.