Specification	NTTFS008P03P8Z

Current - Continuous Drain (Id) @ 25°C	22 A, 96 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	134 nC
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.36 W, 50 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	8-PQFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

NTTFS008P03P8Z Series

Power MOSFET, Single N-Channel, 40 V, 8.5 mOhms, 48 A

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package
ON Semiconductor NTTFS008P03P8Z	30 V	22 A 96 A	5600 pF	-55 °C	150 °C	25 V	Surface Mount	8-PowerWDFN	4.5 V 10 V	134 nC	2.36 W 50 W	3.8 mOhm	P-Channel	MOSFET (Metal Oxide)	3 V	8-PQFN (3.3x3.3)
ON Semiconductor NTTFS008N04CTAG	40 V	14 A 48 A	625 pF	-55 °C	175 ░C	20 V	Surface Mount	8-PowerWDFN	10 V	10 nC	3.1 W 38 W	8.5 mOhm	N-Channel	MOSFET (Metal Oxide)	3.5 V	8-WDFN (3.3x3.3)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.