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NJVMJD32CG
Discrete Semiconductor Products

MJD41CRLG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 6 A, 1.75 W, TO-252 (DPAK), SURFACE MOUNT

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NJVMJD32CG
Discrete Semiconductor Products

MJD41CRLG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 6 A, 1.75 W, TO-252 (DPAK), SURFACE MOUNT

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Technical Specifications

Parameters and characteristics for this part

SpecificationMJD41CRLG
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageDPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.62
100$ 0.43
500$ 0.36
Tape & Reel (TR) 1800$ 0.31
3600$ 0.27
5400$ 0.26
9000$ 0.24
NewarkEach (Supplied on Full Reel) 1$ 0.33
3000$ 0.32
6000$ 0.29
12000$ 0.28
18000$ 0.26
30000$ 0.24
ON SemiconductorN/A 1$ 0.25

Description

General part information

MJD41C Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.