Specification	MJD41CT4

Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	20 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD41C Series

6.0 A, 100 V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Operating Temperature
ON Semiconductor MJD41CT4	15	3 MHz	DPAK	50 µA	Surface Mount	150 °C	-65 °C	20 W	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.5 V	NPN
ON Semiconductor MJD41CRLG	15	3 MHz	DPAK	50 µA	Surface Mount	150 °C	-65 °C	1.75 W	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.5 V	NPN
ON Semiconductor MJD41CT4G	15	3 MHz	DPAK	50 µA	Surface Mount	150 °C	-65 °C	1.75 W	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.5 V	NPN
ON Semiconductor MJD41CTF	15	3 MHz	TO-252AA	10 µA	Surface Mount			1.75 W	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.5 V	NPN	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD41C Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.