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TO-252AA
Discrete Semiconductor Products

MJD41CTF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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TO-252AA
Discrete Semiconductor Products

MJD41CTF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD41CTF
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageTO-252AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJD41C Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.