Discrete Semiconductor Products
STH410N4F7-6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL POWER MOSFET 40 V, 0.8 MOHM TYP, 200 A STRIPFET F7 IN AN H2PAK-6 PACKAGE
Discrete Semiconductor Products
STH410N4F7-6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL POWER MOSFET 40 V, 0.8 MOHM TYP, 200 A STRIPFET F7 IN AN H2PAK-6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STH410N4F7-6AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 141 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 11500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Power Dissipation (Max) | 365 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.1 mOhm |
| Supplier Device Package | H2PAK-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH410N4F7-6AG Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources