STH410N4F7-6AG Series

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package

Catalog

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Qualification	Grade	Mounting Type	Vgs (Max)
STMicroelectronics STH410N4F7-6AG	141 nC	10 V	365 W	11500 pF	H2PAK-6	175 °C	-55 °C	200 A	1.1 mOhm	D2PAK (6 Leads + Tab) TO-263-7	MOSFET (Metal Oxide)	40 V	4.5 V	N-Channel	AEC-Q101	Automotive	Surface Mount	20 V

Catalog

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.