Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag

Discrete Semiconductor Products

JANS2N3637

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TRANS GP BJT PNP 175V 1A 1000MW 3-PIN TO-39 TRAY

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Discrete Semiconductor Products

JANS2N3637

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Microchip Technology

TRANS GP BJT PNP 175V 1A 1000MW 3-PIN TO-39 TRAY

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANS2N3637

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1 W
Qualification	MIL-PRF-19500/357
Supplier Device Package	TO-39
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	175 V

JANTXV2N3637L-Transistor Series

PNP Silicon Amplifier -140V, -1A

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Qualification	Grade	Transistor Type	Mounting Type
Microchip Technology JANTXV2N3637	TO-205AD TO-39-3 Metal Can	10 µA	TO-39	600 mV	1 W	1 A	175 V	MIL-PRF-19500/357	Military	PNP	Through Hole
Microchip Technology JANTXV2N3637L	TO-205AA TO-5-3 Metal Can	10 µA	TO-5AA	600 mV	1 W	1 A	175 V	MIL-PRF-19500/357	Military	PNP	Through Hole
Microchip Technology 2N3637UB	3-SMD No Lead	10 µA	UB	600 mV	1.5 W	1 A	175 V			PNP	Surface Mount
Microchip Technology JAN2N3637UB	3-SMD No Lead	10 µA	UB	600 mV	1.5 W	1 A	175 V	MIL-PRF-19500/357	Military	PNP	Surface Mount
Microchip Technology JANS2N3637	TO-205AD TO-39-3 Metal Can	10 µA	TO-39	600 mV	1 W	1 A	175 V	MIL-PRF-19500/357	Military	PNP	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 85.41
		100	$ 79.31

Description

General part information

JANTXV2N3637L-Transistor Series

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).

Documents

Technical documentation and resources

No documents available