JAN2N3637UB
Active175 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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JAN2N3637UB
Active175 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3637UB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| Grade | Military |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 1.5 W |
| Qualification | MIL-PRF-19500/357 |
| Supplier Device Package | UB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 13.30 | |
| Microchip Direct | N/A | 1 | $ 14.32 | |
| Newark | Each | 100 | $ 13.30 | |
| 500 | $ 12.79 | |||
Description
General part information
JANTXV2N3637L-Transistor Series
This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).
Documents
Technical documentation and resources
