ADPA7006AEHZ-R7
ActiveRF AMPLIFIER, 23 DB GAIN, 11 DB NOISE, 18 TO 44 GHZ, 5 V SUPPLY, -40 °C TO 85 °C, LCC-EP-16
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ADPA7006AEHZ-R7
ActiveRF AMPLIFIER, 23 DB GAIN, 11 DB NOISE, 18 TO 44 GHZ, 5 V SUPPLY, -40 °C TO 85 °C, LCC-EP-16
Technical Specifications
Parameters and characteristics for this part
| Specification | ADPA7006AEHZ-R7 |
|---|---|
| Frequency [Max] | 44 GHz |
| Frequency [Min] | 18 GHz |
| Gain | 22.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 4.5 dB |
| P1dB | 29 dBm |
| Package / Case | 16-CLCC Exposed Pad |
| RF Type | General Purpose |
| Supplier Device Package | 16-CLCC-HS (6x6) |
| Test Frequency [Max] | 34 GHz |
| Test Frequency [Min] | 24 GHz |
| Voltage - Supply [Max] | 5 V |
| Voltage - Supply [Min] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ADPA7006 Series
The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides 23.5 dB of small signal gain, 29 dBm output power for 1 dB compression, and a typical output third-order intercept of 38 dBm. The ADPA7006CHIP requires 800 mA from a 5 V supply on the supply voltage (VDD), and features inputs and outputs that are internally matched to 50 Ω, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are less than 0.31 mm long.ApplicationsMilitary and spaceTest instrumentationCommunications
Documents
Technical documentation and resources
