Discrete Semiconductor Products
PMDXB600UNELZ
ActiveNexperia USA Inc.
20 V, DUAL N-CHANNEL TRENCH MOSFET
Deep-Dive with AI
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Discrete Semiconductor Products
PMDXB600UNELZ
ActiveNexperia USA Inc.
20 V, DUAL N-CHANNEL TRENCH MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMDXB600UNELZ |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 600 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-XFDFN Exposed Pad |
| Power - Max [Max] | 380 mW |
| Rds On (Max) @ Id, Vgs | 620 mOhm |
| Supplier Device Package | DFN1010B-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| 10 | $ 0.32 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| 2000 | $ 0.08 | |||
| Digi-Reel® | 1 | $ 0.45 | ||
| 10 | $ 0.32 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| 2000 | $ 0.08 | |||
| N/A | 215 | $ 0.44 | ||
| Tape & Reel (TR) | 5000 | $ 0.07 | ||
| 10000 | $ 0.06 | |||
| 25000 | $ 0.06 | |||
| 50000 | $ 0.05 | |||
| 125000 | $ 0.05 | |||
Description
General part information
PMDXB600 Series
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources
