Discrete Semiconductor Products

PMDXB600UNEZ

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MOSFET 2N-CH 20V 0.6A 6DFN

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 20V 0.6A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMDXB600UNEZ

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	21.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	265 mW
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

Part	Mounting Type	Package / Case	Supplier Device Package	Power - Max [Max]	FET Feature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PMDXB600UNEZ	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6	265 mW	Logic Level Gate	620 mOhm	950 mV	2 N-Channel (Dual)	600 mA	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	21.3 pF	0.7 nC
Freescale Semiconductor - NXP PMDXB600UNELZ	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6	380 mW		620 mOhm	950 mV	2 N-Channel (Dual)	600 mA	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	21.3 pF	0.7 nC

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General part information

Mosfet Array 20V 600mA 265mW Surface Mount DFN1010B-6

Technical documentation and resources