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PMDXB600UNEZ
Discrete Semiconductor Products

PMDXB600UNEZ

Active
Nexperia USA Inc.

TRANSISTOR MOSFET ARRAY DUAL N-CH 20V 600MA 8-PIN DFN1010B-6 T/R

PMDXB600UNEZ
Discrete Semiconductor Products

PMDXB600UNEZ

Active
Nexperia USA Inc.

TRANSISTOR MOSFET ARRAY DUAL N-CH 20V 600MA 8-PIN DFN1010B-6 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDXB600UNEZ
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C600 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]0.7 nC
Input Capacitance (Ciss) (Max) @ Vds21.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-XFDFN Exposed Pad
Power - Max [Max]265 mW
Rds On (Max) @ Id, Vgs620 mOhm
Supplier Device PackageDFN1010B-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
1$ 0.32
10$ 0.19
10$ 0.31
100$ 0.16
100$ 0.12
500$ 0.13
500$ 0.09
1000$ 0.08
1000$ 0.09
2000$ 0.07
2000$ 0.08
Digi-Reel® 1$ 0.32
1$ 0.44
10$ 0.19
10$ 0.31
100$ 0.12
100$ 0.16
500$ 0.13
500$ 0.09
1000$ 0.09
1000$ 0.08
2000$ 0.08
2000$ 0.07
N/A 0$ 0.39
Tape & Reel (TR) 5000$ 0.06
10000$ 0.06
15000$ 0.05
25000$ 0.05
35000$ 0.05
50000$ 0.05
125000$ 0.04

Description

General part information

PMDXB600 Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.