20 V, dual N-channel Trench MOSFET
20 V, dual N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Feature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Configuration | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 600 mA | 265 mW | DFN1010B-6 | 620 mOhm | Logic Level Gate | 20 V | 950 mV | 0.7 nC | 150 °C | -55 °C | 2 N-Channel (Dual) | 6-XFDFN Exposed Pad | 21.3 pF | Surface Mount | MOSFET (Metal Oxide) |
 Nexperia USA Inc. | 600 mA | 380 mW | DFN1010B-6 | 620 mOhm | 20 V | 950 mV | 0.7 nC | 150 °C | -55 °C | 2 N-Channel (Dual) | 6-XFDFN Exposed Pad | 21.3 pF | Surface Mount | MOSFET (Metal Oxide) |