STPSC10H065BY-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 28.5 NC, TO-252 (DPAK)
STPSC10H065BY-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 28.5 NC, TO-252 (DPAK)
Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC10H065BY-TR |
|---|---|
| Capacitance @ Vr, F | 480 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | DPAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC10H065BY-TR Series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions.